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| High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.6 mm (0.063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 5 W Clamped inductive load VGE = 15 V, VCE = 720 V, TJ = 125C RG = 5 W, non repetitive TC = 25C IGBT Diode IXSK 35N120BD1 IXSX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE(SAT) = 3.6 V Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 190 -55 ... +150 150 -55 ... +150 300 10 6 V V V V A A A A ms W W C C C C g g TO-264 AA (IXSK) G C TM E PLUS TO-247 (IXSX) G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features Hole-less TO-247 package for clip mounting High frequency IGBT and anti-parallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) Reduces assembly time and cost High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 3 TJ = 125C 6 1 3 100 3.6 V V mA mA nA V BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 mA, VCE = VGE VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Device must be heatsunk for high temperature measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 98733 (7/00) IXSX 35N120BD1 IXSX 35N120BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 3600 VCE = 25 V, VGE = 0 V, f = 1 MHz 315 75 120 I C = IC90, VGE = 15 V, VCE = 0.5 VCES 33 49 Inductive load, TJ = 25C I C = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 5.0 W Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C I C = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 5.0 W Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 36 27 160 180 5 38 29 6 240 340 9 300 300 S pF pF pF nC nC nC ns ns ns ns TO-247 HOLE-LESS Outline gfs Cies Coes Cres Qg Qge Qgc IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 9 mJ ns ns mJ ns ns mJ 0.42 K/W TO-264 AA Outline 0.15 K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.75 1.85 7 40 14.3 V V A ns 0.65 K/W I F = 130A, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 %, TJ = 125C IF = 130A, VGE = 0 V, -diF/dt = 100 A/ms TJ =100C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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